DMG3N60SJ3 - MOSFET BVDSS 501V 650V TO251

Fabrikatzailea Taldea zenbakia

DMG3N60SJ3

Barne Taldea zenbakia

ABC-DMG3N60SJ3

fabrikatzailea

Diodes Incorporated

Azalpen laburra

MOSFET BVDSS 501V 650V TO251

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

1043308 Pieces

Erreferentzia Prezioa

~~USD 0.313735~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute DMG3N60SJ3 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak DMG3N60SJ3

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : DMG3N60SJ3

fabrikatzailea : Diodes Incorporated

deskribapena : MOSFET BVDSS 501V 650V TO251

Series : Automotive, AEC-Q101

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 650V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 2.8A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 3.5 Ohm @ 1.5A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Ateko karga (Qg) (Max) @ Vgs : 12.6nC @ 10V

Vgs (Max) : ±30V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 354pF @ 25V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 41W (Tc)

Eragiketa tenperatura : -55°C ~ 150°C (TJ)

Muntatzeko mota : Through Hole

Hornitzaileentzako gailu paketea : TO-251

Paketea / Kaxa : TO-251-3, IPak, Short Leads

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : DMG , DMG3N

Dokumentuak DMG3N60SJ3

Fitxak : DMG3N60SJ3.pdf

produktu erlazionatutako DMG3N60SJ3 Diodes Incorporated

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