SI7900AEDN-T1-GE3 - MOSFET 2N-CH 20V 6A PPAK 1212-8

Fabrikatzailea Taldea zenbakia

SI7900AEDN-T1-GE3

Barne Taldea zenbakia

ABC-SI7900AEDN-T1-GE3

fabrikatzailea

Vishay Siliconix

Azalpen laburra

MOSFET 2N-CH 20V 6A PPAK 1212-8

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

1174040 Pieces

Erreferentzia Prezioa

~~USD 0.2788~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute SI7900AEDN-T1-GE3 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak SI7900AEDN-T1-GE3

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : SI7900AEDN-T1-GE3

fabrikatzailea : Vishay Siliconix

deskribapena : MOSFET 2N-CH 20V 6A PPAK 1212-8

Series : TrenchFET®

Taldearen egoera : Active

FET Mota : 2 N-Channel (Dual) Common Drain

FET Ezaugarria : Logic Level Gate

Xukatu iturburuko tentsioa (Vdss) : 20V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 6A

Rds On (Max) @ Id, Vgs : 26 mOhm @ 8.5A, 4.5V

Vgs (th) (Max) @ Id : 900mV @ 250µA

Ateko karga (Qg) (Max) @ Vgs : 16nC @ 4.5V

Sarrerako ahalmena (Ciss) (Max) @ Vds : -

Potentzia - Max : 1.5W

Eragiketa tenperatura : -55°C ~ 150°C (TJ)

Muntatzeko mota : Surface Mount

Paketea / Kaxa : PowerPAK® 1212-8 Dual

Hornitzaileentzako gailu paketea : PowerPAK® 1212-8 Dual

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : SI790 , SI7900AE

Dokumentuak SI7900AEDN-T1-GE3

Fitxak : SI7900AEDN-T1-GE3.pdf

produktu erlazionatutako SI7900AEDN-T1-GE3 Vishay Siliconix

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