TK39J60W,S1VQ - MOSFET N-CH 600V 38.8A TO-3P

Fabrikatzailea Taldea zenbakia

TK39J60W,S1VQ

Barne Taldea zenbakia

ABC-TK39J60W,S1VQ

fabrikatzailea

Toshiba Semiconductor and Storage

Azalpen laburra

MOSFET N-CH 600V 38.8A TO-3P

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

86310 Pieces

Erreferentzia Prezioa

~~USD 4.875~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute TK39J60W,S1VQ stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak TK39J60W,S1VQ

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : TK39J60W,S1VQ

fabrikatzailea : Toshiba Semiconductor and Storage

deskribapena : MOSFET N-CH 600V 38.8A TO-3P

Series : DTMOSIV

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 600V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 38.8A (Ta)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 65 mOhm @ 19.4A, 10V

Vgs (th) (Max) @ Id : 3.7V @ 1.9mA

Ateko karga (Qg) (Max) @ Vgs : 110nC @ 10V

Vgs (Max) : ±30V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 4100pF @ 300V

FET Ezaugarria : Super Junction

Potentzia xahutzea (Max) : 270W (Tc)

Eragiketa tenperatura : 150°C (TJ)

Muntatzeko mota : Through Hole

Hornitzaileentzako gailu paketea : TO-3P(N)

Paketea / Kaxa : TO-3P-3, SC-65-3

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : TK39 , TK39J6

Dokumentuak TK39J60W,S1VQ

Fitxak : TK39J60W,S1VQ.pdf

produktu erlazionatutako TK39J60W,S1VQ Toshiba Semiconductor and Storage

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