PH5525L,115 - MOSFET N-CH 25V 81.7A LFPAK

Fabrikatzailea Taldea zenbakia

PH5525L,115

Barne Taldea zenbakia

ABC-PH5525L,115

fabrikatzailea

NXP USA Inc.

Azalpen laburra

MOSFET N-CH 25V 81.7A LFPAK

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

99816 Pieces

Erreferentzia Prezioa

~~USD 0~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute PH5525L,115 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak PH5525L,115

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : PH5525L,115

fabrikatzailea : NXP USA Inc.

deskribapena : MOSFET N-CH 25V 81.7A LFPAK

Series : TrenchMOS™

Taldearen egoera : Obsolete

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 25V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 81.7A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 5.5 mOhm @ 25A, 10V

Vgs (th) (Max) @ Id : 2.15V @ 1mA

Ateko karga (Qg) (Max) @ Vgs : 16.6nC @ 4.5V

Vgs (Max) : ±20V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 2150pF @ 12V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 62.5W (Tc)

Eragiketa tenperatura : -55°C ~ 150°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : LFPAK56, Power-SO8

Paketea / Kaxa : SC-100, SOT-669

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : PH5 , PH552

Dokumentuak PH5525L,115

Fitxak : PH5525L,115.pdf

produktu erlazionatutako PH5525L,115 NXP USA Inc.

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