DMT10H015LSS-13 - MOSFET N-CH 100V 8.3A

Fabrikatzailea Taldea zenbakia

DMT10H015LSS-13

Barne Taldea zenbakia

ABC-DMT10H015LSS-13

fabrikatzailea

Diodes Incorporated

Azalpen laburra

MOSFET N-CH 100V 8.3A

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

1221535 Pieces

Erreferentzia Prezioa

~~USD 0.26796~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute DMT10H015LSS-13 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak DMT10H015LSS-13

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : DMT10H015LSS-13

fabrikatzailea : Diodes Incorporated

deskribapena : MOSFET N-CH 100V 8.3A

Series : -

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 100V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 8.3A (Ta)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 16 mOhm @ 20A, 10V

Vgs (th) (Max) @ Id : 3.5V @ 250µA

Ateko karga (Qg) (Max) @ Vgs : 33.3nC @ 10V

Vgs (Max) : ±20V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 1871pF @ 50V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 1.2W (Ta)

Eragiketa tenperatura : -55°C ~ 150°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : 8-SO

Paketea / Kaxa : 8-SOIC (0.154", 3.90mm Width)

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : DMT10 , DMT10H0

Dokumentuak DMT10H015LSS-13

Fitxak : DMT10H015LSS-13.pdf

produktu erlazionatutako DMT10H015LSS-13 Diodes Incorporated

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