FDS8812NZ - MOSFET N-CH 30V 20A 8-SOIC

Fabrikatzailea Taldea zenbakia

FDS8812NZ

Barne Taldea zenbakia

ABC-FDS8812NZ

fabrikatzailea

ON Semiconductor

Azalpen laburra

MOSFET N-CH 30V 20A 8-SOIC

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

59384 Pieces

Erreferentzia Prezioa

~~USD 0~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute FDS8812NZ stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak FDS8812NZ

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : FDS8812NZ

fabrikatzailea : ON Semiconductor

deskribapena : MOSFET N-CH 30V 20A 8-SOIC

Series : PowerTrench®

Taldearen egoera : Obsolete

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 30V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 20A (Ta)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 4 mOhm @ 20A, 10V

Vgs (th) (Max) @ Id : 3V @ 250µA

Ateko karga (Qg) (Max) @ Vgs : 126nC @ 10V

Vgs (Max) : ±20V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 6925pF @ 15V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 2.5W (Ta)

Eragiketa tenperatura : -55°C ~ 150°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : 8-SOIC

Paketea / Kaxa : 8-SOIC (0.154", 3.90mm Width)

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : FDS , FDS8

Dokumentuak FDS8812NZ

Fitxak : FDS8812NZ.pdf

produktu erlazionatutako FDS8812NZ ON Semiconductor

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